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Achieving direct band gap in germanium through integration of Sn alloying and external strain: Journal of Applied Physics: Vol 113, No 7
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Achieving direct band gap in germanium through integration of Sn alloying and external strain: Journal of Applied Physics: Vol 113, No 7
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The band gap for silicon is · 1 eV. (a) Find the ratio of the band gap to kT for silicon at room temperature 300 K . (b) At what temperature does
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